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| Datasheet File OCR Text: |
| RHRU50120 April 1995 File Number 3946.1 50A, 1200V Hyperfast Diode The RHRU50120 (TA49100) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PACKAGING AVAILABILITY PART NUMBER RHRU50120 PACKAGE TO-218 BRAND RHRU50120 Package SINGLE LEAD JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RHRU50120 Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 50oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 1200 1200 1200 50 100 500 150 50 -65 to +175 UNITS V V V A A A W mj oC 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 RHRU50120 Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRU50120 LIMITS SYMBOL VF TEST CONDITION IF = 50A, TC = +25oC IF = 50A, TC = +150oC IR VR = 1200V, TC = +25oC VR = 1200V, TC = +150oC tRR IF = 1A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s tA tB QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. IF = 50A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s IF = 50A, dIF/dt = 100A/s VR = 10V, IF = 0A MIN TYP 50 40 240 150 MAX 3.2 2.6 500 1.0 85 100 1.0 UNITS V V A mA ns ns ns ns nC pF oC/W V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 Q1 +V1 0 t2 t1 R2 +V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 LLOOP DUT Q4 0 0.25 IRM IRM C1 R4 -V4 VRM VR IF dIF dt tA tRR tB t3 0 -V2 R3 Q3 FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 2 RHRU50120 Typical Performance Curves 300 IR , REVERSE CURRENT (A) 3000 1000 IF, FORWARD CURRENT (A) 100 +175oC 100 +100oC 10 +100oC 10 +175oC +25oC 1 +25oC 1 0 1 2 VF, FORWARD VOLTAGE (V) 3 4 0.1 0 200 400 600 800 1000 1200 VR, REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 100 TC = +25oC FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 250 TC = +100oC t, RECOVERY TIMES (ns) tRR t, RECOVERY TIMES (ns) 80 200 tRR 150 tA 100 tB 50 60 tA 40 tB 20 0 1 10 IF, FORWARD CURRENT (A) 50 0 1 10 IF, FORWARD CURRENT (A) 50 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC TC = +175oC 400 FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV) , AVERAGE FORWARD CURRENT (A) 50 DC 40 t, RECOVERY TIMES (ns) 300 tRR 30 SQ. WAVE 200 tA 100 tB 20 10 0 1 10 IF, FORWARD CURRENT (A) 50 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE 3 RHRU50120 Typical Performance Curves 600 CJ , JUNCTION CAPACITANCE (pF) 500 (Continued) 400 300 200 100 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L R + VDD 130 1M DUT VAVL 12V Q2 130 CURRENT SENSE VDD IL IV IL 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4 |
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